Heat dissipation is a big problem for transistors that can amplify the power of 5G and 6G signals. The traditional method is to glue the radiator to the entire back of the chip, which is difficult to improve the effect.
Can device cooling be achieved at the material level of these types of transistors without sacrificing electrical performance? Srabanti Chowdhury, a professor in the Department of Electrical Engineering at Stanford University, describes his team’s latest research in this area: Wrapping a single transistor in a layer of heat-conducting diamond can solve the problem of heat dissipation, keeping the devices in their normal operating temperature range, allowing them to provide greater power output at higher frequencies.
She described it as a “promising” solution that will be presented and presented in December at the annual IEEE International Conference on Electronic Devices.
The next step, says Srabanti Chowdhury, is to move the technology from the lab to industry. Modifying the process of existing transistors to add new layers is not easy, and has to go through reliability testing and high-volume engineering. Its team is working with several industry partners to address these issues.
In addition, this solution is currently available for transistors/chips using gallium nitride materials. As shown below, the team’s engineers were able to grow diamond crystals around gallium nitride transistors to suck heat away from the source. 5G and future 6G devices are extremely dependent on gallium nitride, says Chowdhury. As 5G and 6G devices become smaller, more heat will be generated per unit area, requiring innovative solutions to cope with the high temperatures.
Raytheon Senior Principal Systems Engineer ike Burkland said he was excited to see the solution.
Post time: 12-01-2022